Description: A 300GHz VCO with 0.76mW output power and 13GHz tuning range
Process: 65nm CMOS
Description:: A 0.6V 2.5GHz-5.6GHz mode-switching LC VCO for GSM/EDGE/WCDMA
Process: 65nm CMOS
Description:A 240GHz passive frequency doubler
Process:65nm CMOS
Description:: A 480GHz passive frequency doubler
Process: 65nm CMOS
Description: A 480GHz passive frequency doubler with built-in wideband antenna
Process: 65nm CMOS
Description: An Improved pico-second Pulse Generator Using Soliton resonance
Process: 130nm CMOS
Description: A Low Noise Amplifier at 8.75GHz Using Noise Squeezing
Process: 130nm CMOS
Description: A Passive Frequency Doubler at 20GHz
Process: 130nm CMOS
Description: A 107GHz High Gain Amplifier
Process: 130nm CMOS
Description: A 121 GHz Oscillator, Output Power of ~0.5mW
Process: 130nm CMOS
Description: A 256 GHz Oscillator, Output Power of ~20uW
Process: 130nm CMOS
Description: A 482 GHz Oscillator, Output Power of ~0.1mW
Process: 65nm CMOS
Description: A 482 GHz Oscillator, Output Power of ~0.16mW
Process: 65nm CMOS
Description: A Low Noise Amplifier at 8GHz Using Noise Squeezing
Process: 65nm CMOS
Description: A 220-275 GHz High Efficiency Frequency Doubler
Process: 65nm CMOS
Description: A Multi-Band Oscillator
Process: 65nm CMOS
Description: A Delay-Based 4b, 8GS/s, 20mW ADC in 65nm CMOS
Description: A Multi-Phase Oscillator with Low Phase Noise Performance
Description: The First Passive CMOS Divider at 20GHz Using a Parametric Resonator
Process: 130 nm CMOS
Description: A Low Phase Noise Oscillator
Process: 65nm CMOS
Description: A Doppler-Based Frequency Multiplier
Process: 130nm CMOS
Description: An Inductor-less TIA with 6GHz Bandwidth
Process: 130nm CMOS
Description: Electrical Super-Prism as a High-Q Terahertz Filter
Process: 130 nm CMOS
Description: A Delay-Based 4b, 1GS/s ADC
Process: 65nm CMOS
Description: A pico-second Pulse Generator using Soliton Resonance
Process: 130nm CMOS
Description: A 70-100 GHz Power Amplifier with 120mW Output Power at 85GHz
Process: 130nm BiCMOS
Description: A Pulse Narrowing (2.5psec) and Edge Sharpening (1psec) Transmission Line
Process: 180nm BiCMOS